 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Silicon N Channel MOSFET Triode q q BF 987 For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability Type BF 987 Marking - Ordering Code Q62702-F35 Pin Configuration 1 2 3 D S G Package1) TO-92 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA 45 C Storage temperature range Channel temperature Thermal Resistance Junction - ambient Rth JA Symbol VDS ID Values 20 30 10 300 150 Unit V mA mW IGSM Ptot Tstg Tch - 55 ... + 150 C 350 K/W 1) For detailed information see chapter Package Outlines. BF 987 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 A, - VGS = 4 V Gate-source breakdown voltage IGS = 10 mA, VDS = 0 Gate-source leakage current VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 A AC Characteristics Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Power gain (test circuit) VDS = 10 V, ID = 10 mA , f = 200 MHz, GG = 2 mS, GL = 0.5 mS Noise figure (test circuit) VDS = 10 V, ID = 10 mA , f = 200 MHz, GG = 2 mS, GL = 0.5 mS gfs Cgss Cdg Cdss Gp 14 - - - - 16 2.7 35 1 25 - - - - - mS pF fF pF dB V(BR) DS Values typ. max. Unit 20 6.5 - 5 - - - - - - - 12 50 18 2.5 V V(BR) GSS IGSS nA mA V IDSS - VGS (p) F - 1 - BF 987 Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) Gate transconductance gfs = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 kHz Drain current ID = f (VGS) VDS = 10 V BF 987 Gate input capacitance Cgss = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VGS = 0, IDSS = 10 mA, f = 1 MHz Reverse transfer capacitance Cdg = f (VDS) IDSS = 10 mA, f = 1 MHz, VGS = 0 Gate input admittance y11s VDS = 10 V, IDSS = 10 mA, VG = 0 (common source) BF 987 Gate forward transfer admittance y21s VDS = 10 V, VG = 0, IDSS = 10 mA (common source) Output admittance y22s VDS = 10 V, IDSS = 10 mA, VG = 0 (common source) Test circuit for power gain and noise figure f = 200 MHz |
Price & Availability of BF987
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |